capable of 2.5v gate drive bv dss 30v small outline package r ds(on) 1.5 surface mount device i d 500ma rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 180 /w AP2318GEN-HF parameter rating drain-source voltage 30 gate-source voltage 16 continuous drain current 3 , v gs @ 4v 0.5 continuous drain current 3 , v gs @ 4v 0.4 pulsed drain current 1 2 total power dissipation 0.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.006 thermal data parameter storage temperature range d g s sot-23 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-23 package is widely used for commercial-industrial applications. g d s product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.04 - v/ r ds(on) static drain-source on-resistance 2 v gs =4v, i d =500ma - - 1.5 ? v gs =2.5v, i d =200ma - - 2.5 ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.4 - 1.3 v g fs forward transconductance v ds =4v, i d =500ma - 725 - ms i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 16v, v ds =0v - - + 60 ua q g total gate charge 2 i d =1a - 1.1 1.8 nc q gs gate-source charge v ds =25v - 0.4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 0.4 - nc t d(on) turn-on delay time 2 v ds =15v - 17 - ns t r rise time i d =1a - 44 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 45 - ns t f fall time r d =15 -55- ns c iss input capacitance v gs =0v - 30 48 pf c oss output capacitance v ds =25v - 12 - pf c rss reverse transfer capacitance f=1.0mhz - 11 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.5a, v gs =0v - - 1.3 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 400 /w when mounted on min. copper pad. AP2318GEN-HF product specification 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123
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